super fast recovery diode rf505b6s ? series ? dimensions unit : mm ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features 1)power mold type. (cpd) 2)high switching speed 3)low reverse current ? structure ? construction silicon epitaxial planar ? taping dimensions unit : mm ? absolute maximum ratings tc=25 ? c symbol v rm v r tj tstg ? electrical characteristics tj=25 ? c symbol unit i r a trr ns thermal resistance rth(j-l) ? c/w ? c 5 ? c 50 a parameter conditions limits unit junction temperature 150 storage temperature ? 55 to ? 150 forward current surge peak i fsm 60hz half sin wave, non-repetitive a tc=42 ? c average rectified forward current io 60hz half sin wave,resistive load one cycle peak value, tj=25 ? c reverse voltage direct voltage 600 v repetitive peak reverse voltage duty ? 0.5 600 v reverse current v r =600v - 0.05 parameter conditions min. v forward voltage v f i f =5.0a - typ. 12 junction to lead - 30 max. 1.3 1.7 10 reverse recovery time i f =0.5a,i r =1a,irr=0.25i r -22 cpd 1.6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 (2) (1) (3) (1) (2) (3) production month 1/3 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf505b6s ? electrical characteristic curves 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =1.5a 300us time on glass-epoxy board 120 130 140 150 160 170 ave:150.6pf tj=25 ? c f=1mhz v r =0v n=10pcs 10 100 1000 110100 t ifsm 1 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 50 100 150 200 250 300 ave:107.5a 8.3ms ifsm 1cyc 1 10 100 1000 10000 100000 0 100 200 300 400 500 600 1 10 100 1100 1150 1200 1250 1300 1350 1400 capacitance between terminals:ct(pf) forward voltage:v f (mv) reverse current:i r (na) capacitance between terminals:ct(pf) tj=25 ? c v r =600v n=20pcs ave:33.7na ave:1297mv tj=25 ? c i f =5a n=20pcs v f dispersion map i r dispersion map ct dispersion map time:t(s) rth-t characteristics trr dispersion map 0 5 10 15 20 25 30 ave:22.0ns tj=25 ? c i f =0.5a i r =1a irr=0.25i r n=10pcs 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave:19.9kv electrostatic discharge test esd(kv) esd dispersion map 0.01 0.1 1 10 100 0 500 1000 1500 2000 2500 tj=150 ? c tj=125 ? c tj=25 ? c tj=150 ? c tj=125 ? c tj=25 ? c 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz tj=75 ? c tj=75 ? c forward current:i f (a) forward voltage:v f (mv) v f -i f characteristics reverse voltage:v r (v) v r -i r characteristics reverse current:i r (na) reverse voltage:v r (v) v r -ct characteristics peak surge forward current:i fsm (a) i fsm disresion map reverse recovery time:trr(ns) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics transient thaermal impedance:rth ( ? c/w) 2/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf505b6s forward power dissipation:pf(w) 0 1 2 3 4 5 6 7 8 9 0 30 60 90 120 150 d.c. d=0.2 d=0.1 d=0.05 half sin wave d=0.8 d=0.5 0 1 2 3 4 5 6 7 8 9 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 ambient temperature:ta( ? c) derating curve"(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve"(io-tc) average rectified forward current:io(a) io-pf characteristics t tj=150 ? c d=t/t t v r io v r =480v 0a 0v t tj=150 ? c d=t/t t v r io v r =480v 0a 0v 0 1 2 3 4 5 6 7 02468 half sin wave d.c. d=0.5 d=0.2 d=0.1 d=0.05 d=0.8 3/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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